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| 4AK25 Silicon N Channel Power MOS FET Array Application High speed power switching SP-10 Features * Low on-resistance RDS(on) 0.45, VGS = 10V, ID = 1A * Low drive current * High speed switching * High density mounting 2 1 1 10 3 4 5 6 7 8 10 1, 10 ; Source 2, 4, 6, 8 ; Gate 3, 5, 7, 9 ; Drain 9 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Ratings 60 20 1.5 4.5 1.5 Unit V V A A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Pch(Tc = 25 C)** 2.4 Pch** Tch Tstg 3.6 150 -55 to +150 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Devices operation 4AK25 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.35 10 250 2.0 0.45 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 1A VGS = 10 V * ID = 1 A VGS = 4 V * ID = 1 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 ------------------------------------------------ -- 0.47 0.65 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.9 1.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristeic Curves of 2SK975 -- -- -- -- -- -- -- -- 140 70 20 3 12 50 30 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, dIF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 70 -- s -------------------------------------------------------------------------------------- 4AK25 Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 4 20 2 10 0 50 100 150 0 50 100 150 Ambient Temperature Tc (C) Case Temperature Tc (C) Maximum Safe Operation Area 10 3 Drain Current I D (A) 1 0.3 0.1 Ta = 25C ) n io is on at a ( er are DS p O his y R tb n ted ii lim 10 s ) ot s 0 Sh s 10 (1 m n s 1 tio m ra ) 10 pe C = O 25 C D c= (T PW 0.03 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) |
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